header image
Optical Sources & Amplification Systems Print

The application notes listed below are the result of the Joint Experimental Activities performed by the 17 members of EURO-FOS consortium and Network, during the 4 years of the duration of the project. They formulate an extremely useful source of on-hands information and consolidated laboratory know-how to the researchers in the domain of photonics communications.

Contributing Institutions: IMEC
Summary: This application note aims to provide useful information on the application of the 10Gb/s DC- coupled burst-mode drivers used in JEA2.8 “High-speed Burst-mode ONUs for next-generation PONs”. This application note starts with an explanation on the different terminology for AC-coupled and DC- coupled designs, as most readers will be familiar with AC- coupled devices. Then, a description is given how to power, program and verify the settings on the different driver boards including a Continuous- Wave (CW) laser driver, an Electro- Absorption Modulator (EAM) driver and a gated Semiconductor Optical Amplifier (SOA) driver.
 
Contributing Institutions: IMEC
Summary: This application note aims to provide useful information on the application of the 10Gb/s DC- coupled burst- mode transmitters (BM- Tx) developed by IMEC operating at 1.3um wavelength. This 10Gb/s BM- Tx is used in JEA3.9 - “10 Gbit/s burst- mode experiments for next-generation PON subsystems (High- Speed Burst Mode Transmitters and Receivers)”. This application note serves as a general guideline for using newly developed 10Gb/s burst- mode subsystem in high- speed burst-mode experiments. It starts with operational guides on the different 10G BM components, such as a BM-Tx, a gated SOA and a BM-Rx. Finally, a description is given how to build 10G upstream experiment setup in a back-to-back configuration.
 
Contributing Institutions: Karlsruhe Institute of Technology
Summary: In this application note, we summarize the definition and measurement methods of the gain factor and noise figure of a semiconductor optical amplifier device.
 
Contributing Institutions:Politecnico di Torino (PoliTO)
Summary: This application note deals with the way we measure the phase noise of laser sources. It is motivated by the fact that there are different methods to measure the phase noise variance and several ways to interpret it, often leading to varying results. We show how the traditional method, based on the interferometer technique and on the electrical spectrum analyzer instrument, can overestimate the phase noise variance. We present a systematic method that fully characterizes laser phase noise using a digital receiver, and in agreement with K. KIKUCHI and K. IGARASHI [1]  , we find that the 3>dB linewidth of distributed feedback (DFB) semiconductor lasers has a strong dependence on the measurement time.
 
Contributing Institutions: Scuola Sant'Anna (SSSUP), Universidad Politecnica de Valencia (UPVLC).
Summary: This Application Note describes how to generate RF signals up to 50GHz starting  from a fiber-mode-locked laser. Optimization of the filter design to be used together with a mode-locked laser at 400MHz is investigated, as well as the evaluation of the amplitude and phase-noise stability of the generated carriers and system tunability.
 
Contributing Institutions:Fraunhofer Institute  for Telecommunications, Heinrich Hertz Institut.
Summary: This application note describes a dynamic pump-probe configuration, which enables to measure simultaneously both the gain and the phase dynamics of a device under test, which can for example be a semiconductor optical amplifier.
 
Contributing Institutions:UPC
Summary: This application note provides a detailed description of measurement procedure of the main characteristics of the EDFAs as mainly the signal gain and the noise characteristics as the optical-to-signal-noise-ratio (OSNR).
 
Contributing Institutions:UPC
Summary: This application note provides a detailed description of the experimental set-up and the methodology required for the proper characterization of the static and dynamic wavelength emission and wavelength switching of tuneable lasers.
 
Contributing Institutions:UPC
Summary: High speed Burst mode ONU in next generation PONs requires high speed reflective semiconductor amplifiers (RSOA) for providing a cost?effective solution for the usually requested colourless ONUs. The objective of this application note is to provide a detailed description of the gain and noise figure characterization of SOA and RSOA.
 
Contributing Institutions: INSTITUT TELECOM/TELECOM PARISTECH
Summary: This application note covers both frequency-domain and time-domain measurement techniques for accessing the frequency chirp of an optical signal. The details of small-signal modulation chirp measurement using dispersion fibre and vector network analyser and Time-Resolved Chirp (TRC) measurements using the frequency discriminator based Maintaining Polarisation fibre Interferometer are described.
 
Contributing Institutions: Universidad Politécnica de Valencia (UPVLC)
Summary: This application note describes how carbon nanotubes-coated  fibers can be prepared, and the ultrafast characterization of their optical nonlinearities.
 
Contributing Institutions: Fraunhofer Institute for Telecommunications Heinrich Hertz Institute, Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology
Summary: This application note describes a method to characterize the gain dependence of a four-mode phase-sensitive amplifier on the individual phases of the six interacting waves.
Who's Online
We have 26 guests online
Login
Username

Password

Remember me
Password Reminder